The Insertable B-layer (IBL) is a fourth pixel layer that will be added inside the existing ATLAS pixel detector during the long LHC shutdown of 2013 and 2014. The new four layer pixel system will ensure excellent tracking, vertexing and b-tagging performance in the high luminosity pile-up conditions projected for the next LHC run. The peak luminosity is expected to reach 3• 10^34 cm^−2 s ^−1with an integrated luminosity over the IBL lifetime of 300 fb^−1 corresponding to a design lifetime fluence of 5 • 10^15 n_eqcm^−2 and ionizing dose of 250 Mrad including safety factors. The production front-end electronics FE-I4B for the IBL has been fabricated at the end of 2011 and has been extensively characterized on diced ICs as well as at the wafer level. The production tests at the wafer level were performed during 2012. Selected results of the diced IC characterization are presented, including measurements of the on-chip voltage regulators. The IBL powering scheme, which was chosen based on these results, is described. Preliminary wafer to wafer distributions as well as yield calculations are given.
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机译：可插入B层（IBL）是第四层像素层，该层将在2013年和2014年长时间LHC关闭期间添加到现有ATLAS像素检测器内部。新的四层像素系统将确保出色的跟踪，顶点和b标签性能预计在下一个大型强子对撞机运行时，在高光度堆积条件下。在300 fb ^ -1的IBL寿命内，预期的峰值发光度将达到3•10 ^ 34 cm ^ -2 s ^ -1，其综合发光度对应于5•10 ^ 15 n_eqcm ^ -2的设计寿命通量和250 Mrad的电离剂量，包括安全系数。用于IBL的生产前端电子设备FE-I4B已于2011年底制造，并已在切块IC以及晶圆级上得到广泛表征。在2012年期间进行了晶圆级的生产测试。给出了切块的IC表征的选定结果，包括片上稳压器的测量结果。描述了基于这些结果选择的IBL供电方案。给出了晶片间的初步分布以及成品率计算。
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